Samsung Unveils the Industry’s First 12-Stack HBM3E DRAM: A Revolutionary Leap in Memory Technology
In a groundbreaking feat, Samsung has unveiled the industry’s first 12-stack HBM3E DRAM, pushing the boundaries of high bandwidth memory with unprecedented capacity and performance. This technological marvel marks a significant milestone in the evolution of memory solutions, catering to the ever-growing demands of modern data-intensive applications.
Unparalleled Bandwidth and Capacity: Unleashing the Power of HBM3E 12H
The HBM3E 12H DRAM boasts an impressive maximum bandwidth of 1,280GB/s, a staggering 50% increase compared to its 8-stack HBM3 predecessor. This remarkable bandwidth enhancement enables seamless data transfer and processing, unlocking new possibilities for high-performance computing and AI-driven applications.
Complementing its exceptional bandwidth, the HBM3E 12H DRAM delivers a remarkable capacity of 36GB, a 50% leap from the 8-stack HBM3. This increased capacity empowers data centers and AI systems to handle massive datasets and complex workloads with greater efficiency and speed.
Innovative Stacking Technology: Achieving Density and Performance Harmony
Samsung’s HBM3E 12H DRAM incorporates multiple DRAM modules stacked vertically, forming a compact and powerful memory architecture. Each DRAM module boasts a capacity of 24 gigabits (Gb), equivalent to 3 gigabytes (GB), resulting in a total capacity of 36GB across the 12 stacks.
To achieve this remarkable density while maintaining a slim profile, Samsung employed advanced thermal compression non-conductive film (TC NCF). This innovative material enables the 12-stack HBM3E to maintain the same height as its 8-stack counterpart, meeting stringent package requirements.
TC NCF: A Game-Changer in Stacking Efficiency
The TC NCF technology employed in the HBM3E 12H DRAM offers several advantages that contribute to its exceptional performance. It facilitates the use of small and large bumps during chip bonding, optimizing signal transmission and heat dissipation.
Moreover, TC NCF reduces voids between the stacks and minimizes the gap between them to a mere seven micrometers. This remarkable feat results in a vertically dense architecture, packing more memory capacity into a compact form factor.
Empowering Data Centers and AI Applications: Unleashing the Potential of HBM3E 12H
The HBM3E 12H DRAM’s exceptional performance and capacity hold immense potential for data centers and AI applications. By reducing the total cost of ownership for data centers, this innovative memory solution enables more efficient and cost-effective operations.
In the realm of AI, the HBM3E 12H DRAM accelerates AI training by 34% and enhances the number of simultaneous users of inference services by an impressive 11.5 times compared to its 8-stack HBM3 counterpart. This remarkable performance boost empowers AI systems to tackle complex tasks with greater speed and accuracy.
Availability and Future Prospects: Paving the Way for Memory Innovation
Samsung has already provided samples of the HBM3E 12H DRAM to customers, signaling its commitment to delivering cutting-edge memory solutions. Mass production is slated to commence within the first half of 2023, making this revolutionary technology accessible to a wider audience.
The introduction of the HBM3E 12H DRAM marks a significant milestone in the memory industry. Its exceptional bandwidth, capacity, and performance cater to the insatiable demands of modern data-intensive applications, opening up new avenues for innovation and progress. As the industry continues to evolve, Samsung’s HBM3E 12H DRAM stands as a testament to the company’s unwavering commitment to pushing the boundaries of memory technology.